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Herein, a Nd-doped GdLaNbO4 (Nd:GLNO) single crystal has been grown successfully using the Czochralski method. The segregation coefficient of Nd3+ ions in the Nd:GLNO crystal is measured to be 0.71. The X-ray power diffraction patterns of the Nd:GLNO crystal confirm that the as-grown crystal has the same crystal structure as pure GdNbO4. The structural parameters of the as-grown crystal are obtained via an X-ray Rietveld refinement method. The absorption spectrum, fluorescence spectrum, and fluorescence decay curve of Nd:GLNO were obtained at room temperature. The small emission cross-section at 1065 nm and long fluorescence lifetime of Nd3+ ions (176.4 μs) indicate that the Nd:GLNO crystal is suitable for generating an ultrashort pulse laser. A maximum continuous wave (CW) laser output power of 957 mW is achieved at 1.06 μm, corresponding to an optical-to-optical conversion efficiency of 30.3% and slope efficiency of 34.2%. All the obtained results imply that this crystal is a novel mixed niobate-based laser host suitable for laser diode pumps.

Crystal growth and characterization of a mixed laser crystal: Nd-doped Gd0.89La0.1NbO4

Crystal growth and characterization of a mixed laser crystal: Nd-doped Gd_0.89La_0.1NbO₄