English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

In this study, we present novel multilayer back contact (MLBC) solar cells employing V2Ox (8 nm)/metal/V2Ox (8 nm) (VMV) multilayers as dopant-free hole-selective contacts deposited using a thermal evaporation process at low temperature. The optimized V2Ox films have a high work function and reduced O-deficiency in-gap state energy owing to the introduction of a carefully controlled O2 partial pressure during the evaporation process. The contact resistivities of VMV (12 nm Ag) and VMV (4 nm Au) contacts with n-Si are 1.58 mΩ cm2 and 0.04 mΩ cm2, respectively, which are less than that of a 16 nm V2Ox/n-Si contact. Interestingly, VMV (Au)/n-Si MLBC solar cells demonstrate improved charge carrier transport, leading to an induced p–n junction. Moreover, the dominant interfacial charge carrier transport properties of MLBC solar cells with VMV (Ag)/n-Si and VMV (Au)/n-Si contacts correspond with the diffusion–recombination model, whereas, those of MLBC solar cells with V2Ox/n-Si and VMV (Ca)/n-Si contacts correspond with the multi-tunneling capture emission model at a high-forward-bias voltage. The use of VMV (4 nm Au) as an emitter achieves an efficiency of 19.02% for this type of MLBC solar cell, which is greater than that of V2Ox/n-Si solar cells (17.58%). This work has important implications for enabling the fabrication of low-performance dopant-free back contact solar cells with high stability using a simple fabrication process.

Dopant-free multilayer back contact silicon solar cells employing V2Ox/metal/V2Ox as an emitter

Dopant-free multilayer back contact silicon solar cells employing V₂O_x/metal/V₂O_x as an emitter