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Near-field optical imaging methods have been suffering from the issue of a near field diffraction limit, i.e. imaging resolution and fidelity depend strongly on the distance away from objects, which occurs due to the great decay effect of evanescent waves. Recently, plasmonic cavity lens with off-axis light illumination was proposed as a method for going beyond the near field diffraction limit for imaging dense nanoline patterns. In this paper, this investigation was further extended to more general cases for isolated and discrete line patterns, by enhancing the resolution and correcting the proximity effect with assistant peripheral groove structures. Experiment results demonstrate that the width of single, double and multiple line patterns is well controlled and the uniformity is significantly improved in lithography with a 365 nm light wavelength and 120 nm working distance, being approximately ten times the air distance defined by the near field diffraction limit. The methods are believed to find applications in nanolithography, high density optical storage, scanning probe microscopy and so forth.

Proximity correction and resolution enhancement of plasmonic lens lithography far beyond the near field diffraction limit