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Semiconductor Bi$_2$O$_2$Se nanolayers of high crystal quality have beenrealized via epitaxial growth. These two-dimensional (2D) materials possessexcellent electron transport properties with potential application innanoelectronics. It is also strongly expected that the 2D Bi$_2$O$_2$Senanolayers could be of an excellent material platform for developing spintronicand topological quantum devices, if the presence of strong spin-orbitinteraction in the 2D materials can be experimentally demonstrated. Here, wereport on experimental determination of the strength of spin-orbit interactionin Bi$_2$O$_2$Se nanoplates through magnetotransport measurements. Thenanoplates are epitaxially grown by chemical vapor deposition and themagnetotransport measurements are performed at low temperatures. The measuredmagnetoconductance exhibits a crossover behavior from weak antilocalization toweak localization at low magnetic fields with increasing temperature ordecreasing back gate voltage. We have analyzed this transition behavior of themagnetoconductance based on an interference theory which describes the quantumcorrection to the magnetoconductance of a 2D system in the presence ofspin-orbit interaction. Dephasing length and spin relaxation length areextracted from the magnetoconductance measurements. Comparing to othersemiconductor nanostructures, the extracted relatively short spin relaxationlength of ~150 nm indicates the existence of strong spin-orbit interaction inBi$_2$O$_2$Se nanolayers.

Strong spin-orbit interaction and magnetotransport in semiconductor Bi$_2$O$_2$Se nanoplates