English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Ce-doped SiO x N y films are deposited by magnetron reactive sputtering froma CeO 2 target under nitrogen reactive gas atmosphere. Visiblephotoluminescence measurements regarding the nitrogen gas flow reveal a largeemission band centered at 450 nm for a sample deposited under a 2 sccm flow. Aspecial attention is paid to the origin of such an emission at high nitrogenconcentration. Different emitting centers are suggested in Ce doped SiO x N yfilms (e.g. band tails, CeO 2, Ce clusters, Ce 3+ ions), with differentactivation scenarios to explain the luminescence. X-ray photoelectronspectroscopy (XPS) reveals the exclusive presence of Ce 3+ ions whatever thenitrogen or Ce concentrations, while transmission electron microscopy (TEM)shows no clusters or silicates upon high temperature annealing. With the helpof photoluminescence excitation spectroscopy (PLE), a wide excitation rangefrom 250 nm up to 400 nm is revealed and various excitations of Ce 3+ ions areproposed involving direct or indirect mechanisms. Nitrogen concentration playsan important role on Ce 3+ emission by modifying Ce surroundings, reducing theSi phase volume in SiO x N y and causing a nephelauxetic effect. Taking intoaccount the optimized nitrogen growth parameters, the Ce concentration isanalyzed as new parameter. Under UV excitation, a strong emission is visible tothe naked eye with high Ce 3+ concentration (6 at. %). No saturation of thephotoluminescence intensity is observed, confirming again the lack of Cecluster or silicate phase formation due do the nitrogen presence.

The Nitrogen concentration effect on Ce doped SiOxNy emission: towards optimized Ce3+ for DEL applications