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Heterostructures play significant roles in modern semiconductor devices andmicro/nanosystems in a plethora of applications in electronics,optoelectronics, and transducers. While state-of-the-art heterostructures ofteninvolve stacks of crystalline epi-layers each down to a few nanometers thick,the intriguing limit would be heterto-atomic-layer structures. Here we reportthe first experimental demonstration of freestanding van der Waalsheterostructures and their functional nanomechanical devices. By stackingsingle-layer (1L) MoS2 on top of suspended single-, bi-, tri- and four-layer(1L to 4L) graphene sheets, we realize array of MoS2-graphene heterostructureswith varying thickness and size. These heterostructures all exhibit robustnanomechanical resonances in the very high frequency (VHF) band (up to ~100MHz). We observe that fundamental-mode resonance frequencies of theheterostructure devices fall between the values of graphene and MoS2 devices.Quality (Q) factors of heterostructure resonators are lower than those ofgraphene but comparable to those of MoS2 devices, suggesting interface dampingrelated to interlayer interactions in the van der Waals heterostructures. Thisstudy validates suspended atomic layer heterostructures as an effective deviceplatform and opens opportunities for exploiting mechanically coupled effectsand interlayer interactions in such devices.

Atomic Layer MoS2-Graphene van der Waals Heterostructure Nanomechanical Resonators