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We demonstrate the field-effect transistor (FET) operation ofmolecularly-thin anatase phase produced through solid state transformation fromTi0.87O2 nanosheets. Monolayer Ti0.87O2 nanosheet with a thickness of 0.7 nm istwo-dimensional oxide insulators in which Ti vacancies are incorporated, ratherthan oxygen vacancies. Since the fabrication method, in general, largelyaffects the film quality, the anatase films derived from Ti0.87O2 nanosheetshow interesting characteristics, such as no photocurrent peak at ~2 eV, whichis related to oxygen vacancies, and a larger band gap of 3.8 eV. The 10-nmthick anatase FETs exhibit superior transport characteristics with a maximummobility of ~1.3 cm2V-1s-1 and current on/off ratio of ~105 at roomtemperature. The molecularly-thin anatase FET may provide new functionalities,such as field-effect control of catalytic properties.

Molecularly-thin anatase field-effect transistors fabricated through the solid state transformation of titania nanosheets