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Topological insulators hold great potential for efficient informationprocessing and storage. Using density functional theory calculations, wepredict that a honeycomb lead monolayer can be stabilized on the Al2O3 (0001)substrate and becomes topologically non-trivial with a sizeable band gap (~0.27eV). Furthermore, we propose to use hexagonal boron-nitride (h-BN) monolayer asa protection for the topological states of Pb/Al2O3 and Sn/Al2O3. Our findingssuggest new possibilities for designing and protecting two-dimensional TIs forpractical applications.

Searching for Large-gap Quantum Spin Hall Insulators: Boron-Nitride/(Pb, Sn)/{\alpha}-Al2O3 Sandwich Structures