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We report on thermal transport properties of wurtzite GaN in the presence ofdislocations, by using molecular dynamics simulations. A variety of isolateddislocations in a nanowire configuration were analyzed and found to reduceconsiderably the thermal conductivity while impacting its temperaturedependence in a different manner. We demonstrate that isolated screwdislocations reduce the thermal conductivity by a factor of two, while theinfluence of edge dislocations is less pronounced. The relative reduction ofthermal conductivity is correlated with the strain energy of each of the fivestudied types of dislocations and the nature of the bonds around thedislocation core. The temperature dependence of the thermal conductivityfollows a physical law described by a T$^{-1}$ variation in combination with anexponent factor which depends on the material's nature, the type and thestructural characteristics of the dislocation's core. Furthermore, the impactof the dislocations density on the thermal conductivity of bulk GaN isexamined. The variation and even the absolute values of the total thermalconductivity as a function of the dislocation density is similar for both typesof dislocations. The thermal conductivity tensors along the parallel andperpendicular directions to the dislocation lines are analyzed. The discrepancyof the anisotropy of the thermal conductivity grows in increasing the densityof dislocations and it is more pronounced for the systems with edgedislocations.

Impact of Screw and Edge Dislocation on the Thermal Conductivity of Nanowires and Bulk GaN