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Searching the novel 2D semiconductor is crucial to develop thenext-generation low-dimensional electronic device. Using first-principlescalculations, we propose a class of unexplored binary V-V compoundsemiconductor (PN, AsN, SbN, AsP, SbP and SbAs) with monolayer blackphosphorene ($\alpha$) and blue phosphorene ($\beta$) structure. Our phononspectra and room-temperature molecular dynamics (MD) calculations indicate thatall compounds are very stable. Moreover, most of compounds are found to presenta moderate energy gap in the visible frequency range, which can be tunedgradually by in-plane strain. Especially, $\alpha$-phase V-V compounds have adirect gap while $\beta$-SbN, AsN, SbP, and SbAs may be promising candidates of2D solar cell materials due to a wide gap separating acoustic and opticalphonon modes. Furthermore, vertical heterostructures can be also built usinglattice matched $\alpha$($\beta$)-SbN and phosphorene, and both vdWheterostructures are found to have intriguing direct band gap. The presentinvestigation not only broads the scope of layered group V semiconductors butalso provides an unprecedented route for the potential applications of 2D V-Vfamilies in optoelectronic and nanoelectronic semiconductor devices.

Atomically thin binary V-V compound semiconductor: a first-principles study