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Tantalum nitride, Ta 3 N 5 , is one of the most promising materials for solar energy driven water oxidation. One significant challenge of this material is the high temperature and long duration of ammonolysis previously required to synthesize it, which has so far prevented the use of transparent conductive oxide (TCO) substrates to be used which would allow sub-bandgap light to be transmitted to a photocathode. Here, we overcome this challenge by utilizing atomic layer deposition (ALD) to directly deposit tantalum oxynitride thin films, which can be fully converted to Ta 3 N 5  via ammonolysis at 750 °C for 30 minutes. This synthesis employs far more moderate conditions than previous reports of efficient Ta 3 N 5 photoanodes. Further, we report the first ALD of Ta-doped TiO 2 which we show is a viable TCO material that is stable under the relatively mild ammonolysis conditions employed. As a result, we report the first example of a Ta 3 N 5 electrode deposited on a TCO substrate, and the photoelectrochemical behavior. These results open the door to achieve efficient overall water splitting using a Ta 3 N 5 photoanode.

Tantalum nitride films integrated with transparent conductive oxide substrates via atomic layer deposition for photoelectrochemical water splitting