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International audienceThe charge transport properties of 2,2 0 ,6,6 0-tetraphenyldipyranylidene (DIPO-Ph4 ), a large planar quinö ıd p-conjugated heterocycle, are investigated in field-effect transistor (FET) configuration and by conductive atomic force microscopy (c-AFM). The FET properties show a clear p-type behavior with a hole mobility up to 2 X 10 2 cm 2 V 11 and on/off ratio of 10 4. The transfer characteristics I d /V g present a clear hysteresis typical of a resistive memory effect. This memory effect is again observed by means of c-AFM in lateral mode using a nearby gold top-contact as the counter-electrode. The c-AFM current response recorded for variable distances d ¼ 0.5–9.0 mm between the AFM tip and the top electrode shows a resistive switching behavior in the low-voltage 0.0–3.0 V region. Repeated " write-read-erase-read " cycles performed at low frequency reveal a non-volatile memory effect in the form of high-resistance and low-resistance states with a stable on/off ratio of 102 during cycling operation

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A non-volatile resistive memory effect in 2,2′,6,6′-tetraphenyl-dipyranylidene thin films as observed in field-effect transistors and by conductive atomic force microscopy