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The transport properties of GaNxAs1_x (x ¼ 0.0, 0.25, 0.5, 0.75 and 1.0) alloys are investigated using the semi-classical Boltzmann theory as implemented in the BoltzTraP code. The electronic structures are calculated using the full potential linearized augmented plane wave method within the recently modified Becke-Johnson potential to solve the exchange correlation potential.V transportní vlastnosti GaNxAs1_x (x ¼ 0.0, 0.25 0.5, 0.75 a 1.0) slitiny jsou studovány za použití semi-klasické teorie Boltzmann což je provedeno v BoltzTraP kódu. Elektronické struktury jsou vypočítány s metodou the full potential linearized augmented plane wave method within the recently modified Becke-Johnson potential,která řeší výměnu korelačního potenciálu

Thermoelectric properties of highly-mismatched alloys of GaNxAs1−xfrom first- to second-principles methods: energy conversion

Thermoelectric properties of highly-mismatched alloys of GaN_xAs_1−xfrom first- to second-principles methods: energy conversion