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In this study, we investigated the effect of Ni and Ta doping on resistive switching behaviors of solution-processed HfO X -based resistive switching memory (RRAM) devices.

Control of resistive switching behaviors of solution-processed HfOX-based resistive switching memory devices by n-type doping

Control of resistive switching behaviors of solution-processed HfO_X-based resistive switching memory devices by n-type doping