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Molybdenum disulfide (MoS2) is a particularly interesting member of thefamily of two-dimensional (2D) materials due to its semiconducting and tunableelectronic properties. Currently, the most reliable method for obtaininghigh-quality industrial scale amounts of 2D materials is chemical vapordeposition (CVD), which results in polycrystalline samples. As grain boundaries(GBs) are intrinsic defect lines within CVD-grown 2D materials, their atomicstructure is of paramount importance. Here, through atomic-scale analysis ofmicrometer-long GBs, we show that covalently bound boundaries in 2D MoS2 tendto be decorated by nanopores. Such boundaries occur when differently orientedMoS2 grains merge during growth, whereas the overlap of grains leads toboundaries with bilayer areas. Our results suggest that the nanopore formationis related to stress release in areas with a high concentration of dislocationcores at the grain boundaries, and that the interlayer interaction leads tointrinsic rippling at the overlap regions. This provides insights for thecontrolled fabrication of large-scale MoS 2 samples with desired structuralproperties for applications.

Grain boundary-mediated nanopores in molybdenum disulfide grown by chemical vapor deposition