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We analyzed micrometer-scale titanium-niobium-oxide prototype memristors,which exhibited low write-power (<3 {\mu}W) and energy (<200 fJ/bit/{\mu}m2),low read-power (~nW), and high endurance (>millions of cycles). To understandtheir physico-chemical operating mechanisms, we performed in-operandosynchrotron x-ray transmission nanoscale spectromicroscopy using anultra-sensitive time-multiplexed technique. We observed only spatially uniformmaterial changes during cell operation, in sharp contrast to the frequentlydetected formation of a localized conduction channel in transition-metal-oxidememristors. We also associated the response of assigned spectral featuresdistinctly to non-volatile storage (resistance change) and writing ofinformation (application of voltage and Joule heating). These results providecritical insights into high-performance memristors that will aid in devicedesign, scaling and predictive circuit-modeling, all of which are essential forthe widespread deployment of successful memristor applications.

Spatially uniform resistance switching of low current, high endurance titanium-niobium-oxide memristors