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We report experimentally and theoretically the behavior of freestandinggraphene subject to bombardment of energetic ions, investigating the ability oflarge-scale patterning of freestanding graphene with nanometer sized featuresby focused ion beam technology. A precise control over the He+ and Ga+irradiation offered by focused ion beam techniques enables to investigate theinteraction of the energetic particles and graphene suspended with no supportand allows determining sputter yields of the 2D lattice. We find strongdependency of the 2D sputter yield on the species and kinetic energy of theincident ion beams. Freestanding graphene shows material semi-transparency toHe+ at high energies (10-30 keV) allowing the passage of >97% He+ particleswithout creating destructive lattice vacancy. Large Ga+ ions (5-30 keV), incontrast, collide far more often with the graphene lattice to impartsignificantly higher sputter yield of ~50%. Binary collision theory applied tomonolayer and few-layer graphene can successfully elucidate this collisionmechanism, in great agreement with experiments. Raman spectroscopy analysiscorroborates the passage of a large fraction of He+ ions across graphenewithout much damaging the lattice whereas several colliding ions create singlevacancy defects. Physical understanding of the interaction between energeticparticles and suspended graphene can practically lead to reproducible andefficient pattern generation of unprecedentedly small features on 2D materialsby design, manifested by our perforation of sub-5-nm pore arrays. Thiscapability of nanometer scale precision patterning of freestanding 2D latticesshows practical applicability of the focused ion beam technology to 2D materialprocessing for device fabrication and integration.

Understanding the interaction between energetic ions and freestanding graphene towards practical 2D perforation