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We explored the possibility of producing a high-mobility two-dimensional electron gas (2DEG) in the LaAlO 3 /SrGeO 3 and LaGaO 3 /BaSnO 3 heterostructures using first-principles electronic structure calculations. Our results show that the 2DEG occurs at n-type LaAlO 3 /SrGeO 3 and LaGaO 3 /BaSnO 3 interfaces. Compared to the prototype LaAlO 3 /SrTiO 3 , LaAlO 3 /SrGeO 3 and LaGaO 3 /BaSnO 3 systems yield comparable total interfacial charge carrier density but much lower electron effective mass (nearly half the value of LaAlO 3 /SrTiO 3 ), thus resulting in about twice larger electron mobility and enhanced interfacial conductivity. This work demonstrates that SrGeO 3 and BaSnO 3 can be potential substrate materials to achieve a high-mobility 2DEG in the perovskite-oxide heterostructures.

High-mobility two-dimensional electron gas in SrGeO3- and BaSnO3-based perovskite oxide heterostructures: an ab initio study

High-mobility two-dimensional electron gas in SrGeO₃- and BaSnO₃-based perovskite oxide heterostructures: an ab initio study