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Electronic devices made from organic materials have the potential to supporta more ecologically friendly and affordable future. However, the ability tofabricate devices with well-defined and reproducible electrical and opticalproperties is hindered by the sensitivity to the presence of chemicalimpurities. Oxygen in particular is an impurity that can trap electrons andmodify conductive properties of some organic materials. Until now the3-dimensional profiling of oxygen species in organic semiconductors has beenelusive and the effect of oxygen remains disputed. In this study we map outhigh-spatial resolution 3-dimensional distributions of oxygen inclusions nearthe surface of single crystal rubrene, using Time of Flight Secondary Ion MassSpectroscopy (TOF-SIMS). Channels of diffused oxygen, 'oxygen pillars', arefound extending from uniform oxygen inclusion layers at the surface. Thesepillars extend to depths in excess of 1.8 {\mu}m and act as an entry point foroxygen to diffuse along the ab-plane of the crystal with at least some of thediffused oxygen molecularly binding to rubrene. Our investigation of surfacesat different stages of evolution reveals the extent of oxygen inclusion, whichaffects rubrene's optical and transport properties, and is consequently ofimportance for the reliability and longevity of devices.

Channels of oxygen diffusion in single crystal rubrene revealed