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High quality InN nanoparticles are grown using atmospheric chemical vapourdeposition technique via a self-seeded catalytic approach in the temperaturerange of 580 to 650 oC. In this temperature region, nucleation barrier of InNis overcome by seeding the low density In nano-particles prior to theintroduction of reactive ammonia. Samples having increasing carrier density aregrown with the help of increasing growth temperature to understand its role inoptical phonon structure. Near resonance Raman spectra show complete differentphonon pictures as compared to those for the off-resonance spectra. A Ramanforbidden mode of B1(high), because of the possible breakdown of selection rulein the near-resonance condition, is invoked for the first time. Intensity andfrequency of this mode strongly depend on the carrier concentration in thesample. In off-resonance conditions, A1(LO) mode for the sample with highcarrier concentration is dominated by Fano interference rather thanplasmon-phonon coupling. Variation of intensity of the B1(high) mode iscorrelated with band filling effect, which is substantiated by the luminescencestudies of the InN samples with different carrier concentration.

Excitation dependent Raman studies of self-seeded grown InN nanoparticles with different carrier concentration