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Correction for ‘High density and patternable growth of silicon, germanium and alloyed SiGe nanowires by a rapid anneal protocol’ by M. Bezuidenhout  et al. ,  J. Mater. Chem. C , 2015,  3 , 7455–7462.

Correction: High density and patternable growth of silicon, germanium and alloyed SiGe nanowires by a rapid anneal protocol