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ZnSnN2 is an Earth-abundant analog to the III-Nitrides with potential as asolar absorber due to its direct bandgap, steep absorption onset, anddisorder-driven bandgap tunability. Despite these desirable properties,discrepancies in the fundamental bandgap and degenerate \emph{n}-type carrierdensity have been prevalent issues in the limited amount of literatureavailable on this material. Using a combinatorial RF co-sputtering approach, wehave been able to explore a growth-temperature-composition space forZn(1+x)Sn(1-x)N(2) over the ranges 35-340 degrees C and 0.30-0.75 Zn/(Zn+Sn).In this way, we were able to identify an optimal set of deposition parametersfor obtaining as-deposited films with wurtzite crystal structure and carrierdensity as low as 1.8 x 10^(18) cm^(-3). Films grown at 230 degrees C withZn/(Zn+Sn) = 0.60 were found to have the largest grain size overall (70 nmdiameter on average) while also exhibiting low carrier density (3 x 10^(18)cm^(-3)) and high mobility (8.3 cm^(2) V^(-1) s^(-1)). Furthermore, we reportevidence of a Burstein-Moss shift widening the apparent bandgap as cationcomposition becomes increasingly Sn-rich, and tunable carrier density as afunction of cation composition (lower carrier density for higher Zn content),which suggests the formation of defect complexes. Collectively, these findingsprovide important insight into the fundamental properties of the Zn-Sn-Nmaterial system, and also highlight the potential to utilize ZnSnN2 forphotovoltaics.

Combinatorial Insights into Doping Control and Transport Properties of Zinc Tin Nitride