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We present the micro-photoluminescence ($\mu$PL) and micro-reflectancecontrast spectroscopy studies on thin films of MoSe2 with layer thicknessesranging from a monolayer (1L) up to 5L. The thickness dependent evolution ofthe ground and excited state excitonic transitions taking place at variouspoints of the Brillouin zone is determined. Temperature activated energy shiftsand linewidth broadenings of the excitonic resonances in 1L, 2L and 3L flakesare accounted for by using standard formalisms previously developed forsemiconductors. A peculiar shape of the optical response of the ground state(A) exciton in monolayer MoSe2 is tentatively attributed to the appearance ofFano-type resonance. Rather trivial and clearly decaying PL spectra ofmonolayer MoSe2 with temperature confirm that the ground state exciton in thismaterial is optically bright in contrast to a dark exciton ground state inmonolayer WSe2.

Exciton band structure in layered MoSe2: from a monolayer to the bulk limit