English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Systematic engineering of atomic-scale low-dimensional defects intwo-dimensional nanomaterials is a promising way to modulate the electronicproperties of these nanomaterials. Defects at interfaces such as grainboundaries and line defects can often be detrimental to technologicallyimportant nanodevice operations and thus a fundamental understanding of howsuch one-dimensional defects may have an influence on its physio-chemicalproperties is pivotal to optimizing their device performance. Of late,two-dimensional phosphorene has attracted much attention due to its highcarrier mobility and good mechanical flexibility. In this study, usingdensity-functional theory, we investigate the temperature-dependent energeticsand electronic structure of a single-layered phosphorene with various faultline defects. We have generated different line defect models based on a faultmethod, rather than the conventional rotation method. This has allowed us tostudy and identify new low-energy line defects, and we show how theselow-energy line defects could well modulate the electronic band gap energies ofsingle-layered two-dimensional phosphorene -- offering a range of metallic tosemiconducting properties in these newly proposed low-energy line defects inphosphorene.

Remarkably low-energy one-dimensional fault line defects in single-layered phosphorene