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Two-dimensional layered materials, such as transition metal dichalcogenides(TMDCs), are promising materials for future electronics owing to their uniqueelectronic properties. With the presence of a band gap, atomically thin gatedefined quantum dots (QDs) can be achieved on TMDCs. Here, standardsemiconductor fabrication techniques are used to demonstrate quantum confinedstructures on WSe2 with tunnel barriers defined by electric fields, therebyeliminating the edge states induced by etching steps, which commonly appear ingapless graphene QDs. Over 40 consecutive Coulomb diamonds with a chargingenergy of approximately 2 meV were observed, showing the formation of a QD,which is consistent with the simulations. The size of the QD could be tunedover a factor of 2 by changing the voltages applied to the top gates. Theseresults shed light on quantum nano-devices on TMDCs for further researches.

A gate defined quantum dot on the two-dimensional transition metal dichalcogenide semiconductor WSe2