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Hydrogenated silicenes possess peculiar properties owing to the strong H-Sibonds, as revealed by an investigation using first principles calculations. Thevarious charge distributions, bond lengths, energy bands, and densities ofstates strongly depend on different hydrogen configurations and concentrations.The competition of strong H-Si bondings and weak sp3 hybridization dominate theelectronic properties. Chair configurations belong to semiconductors, while thetop configurations show a nearly dispersionless energy band at the Fermi level.Both two systems display H-related partially flat bands at middle energy, andrecovery of low-lying \pi bands during the reduction of concentration. Theirdensities of states exhibit prominent peaks at middle energy, and the topsystems have a delta-funtion-like peak at E=0. The intensity of these peaks aregradually weakened as the concentration decreases, providing an effectivemethod to identify the H-concentration in scanning tunneling spectroscopyexperiments.

H-Si bonding-induced unusual electronic properties of silicene: a method to identify hydrogen concentration