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High quality, nanostructured Bi2Te3, with an unprecedented degree of positional and orientational control of the material form on the nanoscale, is readily obtained by low pressure chemical vapour deposition using a new molecular precursor. This system offers a convenient method that delivers key structural requirements necessary to improve the thermoelectric efficiency of Bi2Te3 and to develop the nascent field of topological insulators.

Controlling the nanostructure of bismuth telluride by selective chemical vapour deposition from a single source precursor