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Excitation wavelength dependent femtosecond transient photocurrents were measured on CuIn(S,Se)2 solar cell devices, in the range of 330–1300 nm. Below 450 nm wavelength excitations, charge recombination in CdS/ZnO layers is determined to be responsible for longer decays and lower EQE. Femtosecond pump–probe measurements also support the charge transfer and recombination in CdS/ZnO layers. These measurements will be helpful to design high efficiency CISSe solar cells, by selecting suitable buffer layers.

Photophysical investigation of charge recombination in CdS/ZnO layers of CuIn(S,Se)2 solar cell

Photophysical investigation of charge recombination in CdS/ZnO layers of CuIn(S,Se)₂ solar cell