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Aerosol assisted chemical vapour deposition (AACVD) was employed to synthesise highly transparent and conductive ZnO, fluorine or aluminium doped and aluminium–fluorine co-doped ZnO thin films on glass substrates at 450 °C. All films were characterised by X-ray diffraction (XRD), wavelength dispersive X-ray spectroscopy (WDX), X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and UV/Vis/Near IR spectroscopy. The films were 300–350 nm thick, crystalline and displayed high transparency at 550 nm (80–90%). The co-doped film consisted of 1 at.% fluorine and 2 at.% aluminium, exhibiting a charge carrier concentration and a charge carrier mobility of 3.47 × 1020 cm−3 and 9.7 cm2 V−1 s−1, respectively. The band gap of the co-doped film was found to be 3.7 eV and the plasma edge crossover was ca. 1800 nm. This film had a highly structured morphology in comparison to the un-doped and single doped ZnO films for transparent conducting oxide applications.

Transparent conductive aluminium and fluorine co-doped zinc oxide films via aerosol assisted chemical vapour deposition