English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Tools annual

Global: Zendy Free Plan

Global: Zendy Tools monthly

Global: Zendy Plus monthly

Structural and electronic properties of silicene adsorbed by five kinds oftransition metal atoms (Cu, Ag, Au, Pt, and Ir) are systematically studied byusing first-principles calculations. We find that such adsorption can induce aband gap at the Dirac point of doped silicene. Doped silicene can reach a bandgap up to 0.23 eV while keeping a relatively small effective mass of around 0.1me, thus having high carrier mobility estimated to be 50000 cm2/Vs. P-typedoping and neutral state is realized in silicene by Ir and Pt adsorption,respectively, while n-type doping is done by Cu, Ag, and Au adsorption. Basedon the knowledge above, a silicene p-i-n tunneling field effect transistor(TFET) is proposed and simulated by both first-principles and semi-empiricalapproaches. Silicene TFET shows high performance with an on-off ratio of 10^3,a sub-threshold swing of 90 mV/dec, and an on-state current of 1 mA/{\mu}m.Such an on-state current is even larger than that of most other existing TFETs.

Tunable Band Gap and Doping Type in Silicene by Surface Adsorption: towards Tunneling Transistors