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Atomically thin group-VIB transition metal dichalcogenides (TMDs) haverecently emerged as a new class of two-dimensional (2D) semiconductors withextraordinary properties including the direct band gap in the visible frequencyrange, the pronounced spin-orbit coupling, the ultra-strong Coulombinteraction, and the rich physics associated with the valley degree of freedom.These 2D TMDs exhibit great potentials for device applications and haveattracted vast interest for the exploration of new physics. 2D TMDs havecomplex electronic structures which underlie their physical properties. Here wereview the bulk electronic structures in these new 2D materials as well as thetheoretical models developed at different levels, along which we sort out theunderstandings on the origins of a variety of properties observed or predicted.

Electronic structures and theoretical modelling of two-dimensional group-VIB transition metal dichalcogenides