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The optical absorption of nanoscale thickness semiconductor films on top oflight-trapping structures based on optical interference effects combined withspectrum-splitting structures is theoretically investigated. Nearly perfectabsorption over a broad spectrum range can be achieved in $<100$ nm thick filmson top of one-dimensional photonic crystal or metal films. This phenomenon canbe attributed to interference induced photonic localization, which enhances theabsorption and reduces the reflection of the films. Perfect solar absorptionand low carrier thermalization loss can be achieved when the light-trappingstructures with wedge-shaped spacer layer or semiconductor films are combinedwith spectrum-splitting structures.

Perfect light trapping in nanoscale thickness semiconductor films with resonant back reflector and spectrum-splitting structures