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In this work we report new silicon and germanium tubular nanostructures withno corresponding stable carbon analogues. The electronic and mechanicalproperties of these new tubes were investigated through ab initio methods. Ourresults show that the structures have lower energy than their correspondingnanoribbon structures and are stable up to high temperatures (500 and 1000 K,for silicon and germanium tubes, respectively). Both tubes are semiconductingwith small indirect band gaps, which can be significantly altered by bothcompressive and tensile strains. Large bandgap variations of almost 50% wereobserved for strain rates as small as 3%, suggesting possible applications insensor devices. They also present high Young's modulus values (0.25 and 0.15TPa, respectively). TEM images were simulated to help the identification ofthese new structures.

One-dimensional Silicon and Germanium Nanostructures With No Carbon Analogues