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The nonlinear transport properties of nanometer-scale junctions formedbetween an inert metallic tip and an Ag film covered by a thin Ag$_{2}$S layerare investigated. Suitably prepared samples exhibit memristive behavior withtechnologically optimal ON and OFF state resistances yielding to resistiveswitching on the nanosecond time scale. Utilizing point contact Andreevreflection spectroscopy we studied the nature of electron transport in theactive volume of the memristive junctions showing that both the ON and OFFstates correspond to truly nanometer scale, highly transparent metallicchannels. Our results demonstrate the merits of Ag$_{2}$S nanojunctions asnanometer-scale memory cells with GHz operation frequencies.

GHz Operation of Nanometer-Scale Metallic Memristors: Highly Transparent Conductance Channels in Ag$_{2}$S Devices