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Topological insulators (TIs) are exotic materials which have topologicallyprotected states on the surface due to the strong spin-orbit coupling. However,a lack of ordered growth of TI thin films on amorphous dielectrics and/orinsulators presents a challenge for applications of TI-junctions. We report thegrowth of topological insulator Bi2Se3 thin films on amorphous SiO2 bymolecular beam epitaxy (MBE). To achieve the ordered growth of Bi2Se3 onamorphous surface, the formation of other phases at the interface is suppressedby Se passivation. Structural characterizations reveal that Bi2Se3 films aregrown along the [001] direction with a good periodicity by van der Waalsepitaxy mechanism. Weak anti-localization effect of Bi2Se3 films grown onamorphous SiO2 shows modulated electrical property by the gating response. Ourapproach for ordered growth of Bi2Se3 on amorphous dielectric surface presentsconsiderable advantages for TI-junctions with amorphous insulator or dielectricthin films.

Ordered Growth of Topological Insulator Bi2Se3 Thin Films on Dielectric Amorphous SiO2 by MBE