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We demonstrate a tunable electron-blocking layer to enhance the performance of an Earth-abundant metal-oxide solar-cell material. A 5 nm thick amorphous ternary metal-oxide buffer layer reduces interface recombination, resulting in sizable open-circuit voltage and efficiency enhancements. This work emphasizes the importance of interface engineering in improving the performance of Earth-abundant solar cells.Chesonis Family FoundationMIT Energy Initiative (Robert Bosch GmbH)National Science Foundation (U.S.) (Award CBET-1032955)National Science Foundation (U.S.) (CAREER Award ECCS-1150878)National Science Foundation (U.S.) (Award DMR-0819762)National Science Foundation (U.S.). Graduate Research Fellowship Progra

Ultrathin amorphous zinc-tin-oxide buffer layer for enhancing heterojunction interface quality in metal-oxide solar cells