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In this article, the important role of the intrinsic defects in size-controlled ZnO nanowires (NWs) which play a critical role in the properties of the NWs, was studied with a combined innovative experimental analysis. The NWs prepared by both the aqueous solution method and chemical vapour deposition process were of increasing length and decreasing size-to-volume (S/V) ratio. The combined approach involved different analytical and spectroscopic techniques and from the correlation between the different measurements, the concentration of the oxygen vacancies jointly with the zinc interstitials defects and the zinc vacancy defects was observed to be positively or negatively correlated, respectively, with the magnitude of the photoluminescence intensity and radiative lifetimes. Furthermore, the experimental results also suggest that the oxygen vacancy defects are not only spatially located on the surface of the NW but an increasing fraction of the total oxygen vacancy defects connected with the green emission is also located in an annulus region beneath the surface as the ZnO NWs elongate. On the other hand, as the donor concentration plays a critical function in the properties of the ZnO NWs, an analytical model was derived for the calculation of the donor concentration of the NWs directly from its reverse-biased current-voltage characteristics obtained from the conductive atomic force microscopy measurements.

Assorted analytical and spectroscopic techniques for the optimization of the defect-related properties in size-controlled ZnO nanowires