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Iron chalcogenide superconductors FeSe 1− x  Te  x   are important materials for investigating the relation be-tween the superconductivity and the orbital and/or electronic nematic order, because the end member material FeSe exhibits a structural transition without a magnetic phase transition. However, the phase separation occurs in the region of 0.1 ≤  x  ≤ 0.4 for bulk samples, and it prevents the complete understanding of this system. Here, we report the successful fabrication of epitaxial thin films of FeSe 1− x  Te  x   with 0 ≤  x  ≤ 0.7, which includes the phase-separation region, on LaAlO 3  substrates via pulsed laser deposition. In the temperature dependences of differential resistivity for these films with 0 ≤  x  ≤ 0.3, the dip- or peak- anomalies, which are well-known to be originated from the structural transition in FeSebulk samples, are observed at the characteristic temperatures,  T *. The doping-temperature ( x – T ) phase diagram of FeSe 1− x  Te  x   films clearly shows that  T * decreases with increasing  x , and that  T  c  suddenly changes at a certain Te content where  T * disappears, which turns out to be commonly observed for both films on LaAlO 3  and CaF 2 . These indicate the importance of controlling the structural transition to achieve high  T  c  in iron chalcogenides.

Control of structural transition in FeSe1−xTex thin films by changing substrate materials