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Rashba spin orbit coupling in topological insulators has attracted muchinterest due to its exotic properties closely related to spintronic devices.The coexistence of nontrivial topology and giant Rashba splitting, however, hasrare been observed in two-dimensional films, limiting severely its potentialapplications at room temperature. Here, we propose a series of inversionasymmetric group IV films, ABZ2, whose stability are confirmed by phononspectrum calculations. The analyses of electronic structures reveal that theyare intrinsic 2D TIs with a bulk gap as large as 0.74 eV, except for GeSiF2,SnSiCl2, GeSiCl2 and GeSiBr2 monolayers which can transform from normal totopological phases under appropriate tensile strains. Another prominentintriguing feature is the giant Rashba spin splitting with a magnitude reaching0.15 eV, the largest value reported in 2D films. These results present aplatform to explore 2D TIs for room temperature device applications.

Two-Dimensional Large Gap Topological Insulators with Large Rashba Spin-Orbit Coupling in Group-IV films