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Based on the first principles calculation, we investigate the electronic band structures of graphene-MoS 2  and Ti-MoS 2  heterojunctions under gate-voltages. By simultaneous control of external electric fields and carrier charging concentrations, we show that the graphene’s Dirac point position inside the MoS 2  bandgap is easily modulated with respect to the co-varying Fermi level, while keeping the graphene’s linear band structure around the Dirac point. The easy modulation of graphene bands is not confined to the special cases where the conduction-band-minimum point of MoS 2  and the Dirac point of graphene are matched up in reciprocal space, but is generalized to their dislocated cases. This flexibility caused by the strong decoupling between graphene and MoS 2  bands enhances the gate-controlled switching performance in MoS 2 -graphene hybrid stacking-device.

Work Function Tuning in Two-Dimensional MoS2 Field-Effect-Transistors with Graphene and Titanium Source-Drain Contacts