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GaV$_4$S$_8$ is a multiferroic semiconductor hosting N{\'e}el-type magneticskyrmions dressed with electric polarization. At T$_s$ = 42K, the compoundundergoes a structural phase transition of weakly first-order, from anon-centrosymmetric cubic phase at high temperatures to a polar rhombohedralstructure at low temperatures. Below T$_s$, ferroelectric domains are formedwith the electric polarization pointing along any of the four $\left< 111\right>$ axes. Although in this material the size and the shape of theferroelectric-ferroelastic domains may act as important limiting factors in theformation of the N{\'e}el-type skyrmion lattice emerging below T$_C$=13\:K, thecharacteristics of polar domains in GaV$_4$S$_8$ have not been studied yet.Here, we report on the inspection of the local-scale ferroelectric domaindistribution in rhombohedral GaV$_4$S$_8$ using low-temperature piezoresponseforce microscopy. We observed mechanically and electrically compatible lamellardomain patterns, where the lamellae are aligned parallel to the (100)-typeplanes with a typical spacing between 100 nm-1.2 $\mu$m. We expect that thecontrol of ferroelectric domain size in polar skyrmion hosts can be exploitedfor the spatial confinement and manupulation of N{\'e}el-type skyrmions.

Characteristics of ferroelectric-ferroelastic domains in N{\'e}el-type skyrmion host GaV$_4$S$_8$