English (United Kingdom)

https://curated-unify.zendy.io/wp-json/zendy-region/v1/featured_content/oa?rat=en

https://curated-unify.zendy.io/wp-json/zendy-region/v1/highlighted_journal/

Global: Zendy Plus annual

Presents the access of premium content as premium feature

Premium Content

Presents the keyphrase highlighting as premium feature

Keyphrase Highlighting

Presents the summarisation as premium feature

Summarisation

Insights

Presents the pdf analysis as premium feature

PDF Analysis

Presents the zaia usage as premium feature

ZAIA

Global: Zendy Plus monthly

Global: Zendy Tools annual

Global: Zendy Tools monthly

Global: Zendy Free Plan

The crystal structure of bulk SrTiO$_3$(STO) transitions from cubic totetragonal at around 105K. Recent local scanning probe measurements ofLaAlO$_3$/SrTiO$_3$ (LAO/STO) interfaces indicated the existence of spatiallyinhomogeneous electrical current paths and electrostatic potential associatedwith the structural domain formation in the tetragonal phase of STO. However,how these effects impact the electron conduction in LAO/STO devices has notbeen fully studied. Here we report a study of temperature dependent electronictransport in combination with the polarized light microscopy of structuraldomains in mesoscopic scale LAO/STO devices. By reducing the spatial size ofthe conductive interface to be comparable to the size of a single tetragonaldomain of STO, the anisotropy of interfacial electron conduction inrelationship to the domain wall and its direction was characterized in thetemperature range $T$=10-300K. It was found that the four-point resistancemeasured with current parallel to the domain wall in device is larger than theresistance measured perpendicular to the domain wall. This observation isqualitatively consistent with the current diverting effect from a moreconductive domain wall within the sample. Among all the samples studied, themaximum resistance ratio found is at least 10 and could be as large as 10$^5$at $T$=10K. This electronic anisotropy may have implications on other oxidehetero-interfaces and the further understanding of electronic/magneticphenomena found in LAO/STO.

Anisotropic electrical resistance in mesoscopic LaAlO$_3$/SrTiO$_3$ devices with individual domain walls