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Two-dimensional molybdenum disulfide (MoS 2 ) is a promising material for ultrasensitive photodetector owing to its favourable band gap and high absorption coefficient. However, their commercial applications are limited by the lack of high quality p-n junction and large wafer scale fabrication process. A high speed Si/MoS 2  p-n heterojunction photodetector with simple and CMOS compatible approach has been reported here. The large area MoS 2  thin film on silicon platform has been synthesized by sulfurization of RF-sputtered MoO 3  films. The fabricated molecular layers of MoS 2  on silicon offers high responsivity up to 8.75 A/W (at 580 nm and 3 V bias) with ultra-fast response of 10 μsec (rise time). Transient measurements of Si/MoS 2  heterojunction under the modulated light reveal that the devices can function up to 50 kHz. The Si/MoS 2  heterojunction is found to be sensitive to broadband wavelengths ranging from visible to near-infrared light with maximum detectivity up to ≈1.4 × 10 12  Jones (2 V bias). Reproducible low dark current and high responsivity from over 20 devices in the same wafer has been measured. Additionally, the MoS 2 /Si photodetectors exhibit excellent stability in ambient atmosphere.

High-Speed Scalable Silicon-MoS2 P-N Heterojunction Photodetectors