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Since the technological breakthrough prompted by the inception of lightemitting diodes based on III-nitrides, these material systems have emerged asstrategic semiconductors not only for the lighting of the future, but also forthe new generation of high-power electronic and spintronic devices. WhileIII-nitride optoelectronics in the visible and ultraviolet spectral range iswidely established, all-nitride and In-free efficient devices in thenear-infrared (NIR) are still wanted. Here, through a comprehensive protocol ofdesign, modeling, epitaxial growth and in-depth characterization, we developAl$_x$Ga$_{1-x}$N:Mn/GaN NIR distributed Bragg reflectors and we show theirefficiency in combination with GaN:(Mn,Mg) layers containing Mn-Mg$_{k}$complexes optically active in the telecommunication range of wavelengths.

All-nitride and In-free Al$_x$Ga$_{1-x}$N:Mn/GaN distributed Bragg reflectors for the near-infrared