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Low-power resistive random access memory (LP-ReRAM) devices have attracted increasing attention owing to their advantages of low operation power. In this study, a vertical-type LP-ReRAM consisting of TiN/Ti/HfO 2 /TiN structure was fabricated. The switching mechanism for LP-ReRAM was elucidated as the conductive filament mechanism for conventional mode, and an interface-type switching mechanism for low power mode was proposed. The analysis of low frequency noise shows that power spectral density (PSD) is approximately proportional to 1/ f  for conventional operation mode. Nevertheless, for low power mode, the PSD of low resistance state (LRS) is proportional to 1/ f , while that of high resistance state (HRS) is clear proportional to 1/ f  2 . The envelope of multiple Lorentzian spectra of 1/ f  2  characteristics due to different traps reveals the characteristics of 1/ f . For HRS of low power mode, a limited number of traps results in a characteristic of 1/ f  2 . During the set process, the number of oxygen vacancies increases for LRS. Therefore, the PSD value is proportional to 1/ f . Owing to the increase in the number of traps when the operation mode changes to conventional mode, the PSD value is proportional to 1/ f . To the best of our knowledge, this is the first study that reveals the different noise characteristics in the low power operation mode from that in the conventional operation mode.

Investigation of switching mechanism in HfOx-ReRAM under low power and conventional operation modes