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High quality wafer-scale free-standing WS 2  grown by van der Waals rheotaxy (vdWR) using Ni as a texture promoting layer is reported. The microstructure of vdWR grown WS 2  was significantly modified from mixture of crystallites with their c-axes both parallel to (type I) and perpendicular to (type II) the substrate to large type II crystallites. Wafer-scale transfer of vdWR grown WS 2  onto different substrates by an etching-free technique was demonstrated for the first time that utilized the hydrophobic property of WS 2  and hydrophilic property of sapphire. Our results show that vdWR is a reliable technique to obtain type-II textured crystallites in WS 2 , which is the key factor for the wafer-scale etching-free transfer. The transferred films were found to be free of observable wrinkles, cracks, or polymer residues. High quality p-n junctions fabricated by room-temperature transfer of the p-type WS 2  onto an n-type GaN was demonstrated with a small leakage current density of 29.6 μA/cm 2  at −1 V which shows superior performances compared to the directly grown WS 2 /GaN heterojunctions.

Fabrication of WS2/GaN p-n Junction by Wafer-Scale WS2 Thin Film Transfer