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Highly directional-dependent metal-insulator transition is observed in epitaxial double perovskite LaBaCo 2 O 5.5+δ  films. The film exhibit metallic along [100], but remain semiconducting along [010] under application of a magnetic field parallel to the surface of the film. The physical origin for the properties is identified as in-plane tensile strain arising from oxygen vacancies. First-principle calculations suggested the tensile strain drastically alters the band gap, and the vanishing gap opens up [100] conduction channels for Fermi-surface electrons. Our observation of strain-induced highly directional-dependent metal-insulator transition may open up new dimension for multifunctional devices.

Anisotropic Strain Induced Directional Metallicity in Highly Epitaxial LaBaCo2O5.5+δ Thin Films on (110) NdGaO3