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The experimental realization of the quantum anomalous Hall (QAH) effect inmagnetically-doped (Bi, Sb)2Te3 films stands out as a landmark of moderncondensed matter physics. However, ultra-low temperatures down to few tens ofmK are needed to reach the quantization of Hall resistance, which is two ordersof magnitude lower than the ferromagnetic phase transition temperature of thefilms. Here, we systematically study the band structure of V-doped (Bi, Sb)2Te3thin films by angle-resolved photoemission spectroscopy (ARPES) and showunambiguously that the bulk valence band (BVB) maximum lies higher in energythan the surface state Dirac point. Our results demonstrate clear evidence thatlocalization of BVB carriers plays an active role and can account for thetemperature discrepancy.

Origin of the low critical observing temperature of the quantum anomalous Hall effect in V-doped (Bi, Sb)2Te3 film