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The practical difficulties to use graphene in microelectronics andoptoelectronics is that the available methods to grow graphene are not easilyintegrated in the mainstream technologies. A growth method that could overcomeat least some of these problems is chemical vapour deposition (CVD) of graphenedirectly on semiconducting (Si or Ge) substrates. Here we report on thecomparison of the CVD and molecular beam epitaxy (MBE) growth of graphene onthe technologically relevant Ge(001)/Si(001) substrate from ethene (C$_2$H$_4$)precursor and describe the physical properties of the films as well as wediscuss the surface reaction and diffusion processes that may be responsiblefor the observed behavior. Using nano angle resolved photoemission (nanoARPES)complemented by transport studies and Raman spectroscopy, we report the directobservation of massless Dirac particles in monolayer graphene, providing acomprehensive mapping of their low-hole doped Dirac electron bands. Themicrometric graphene flakes are oriented along two predominant directionsrotated by $30^\circ$ with respect to each other. The growth mode is attributedto the mechanism when small graphene "molecules" nucleate on the Ge(001)surface and it is found that hydrogen plays a significant role in this process.

Direct growth of low-doped graphene on Ge/Si(001) surfaces