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Light trapping in planar ultrathin-film solar cells is limited due to a smallnumber of optical modes available in the thin-film slab. A nanostructuredthin-film design could surpass this limit by providing broadband increase inthe local density of states in a subwavelength volume and maintaining efficientcoupling of light. Here we report a broadband metasurface design, enablingefficient and broadband absorption enhancement by direct coupling of incominglight to resonant modes of subwavelength-scale Mie nanoresonators defined inthe thin-film active layer. Absorption was investigated both theoretically andexperimentally in prototypes consisting of lithographically patterned,two-dimensional periodic arrays of silicon nanoresonators on silica substrates.A crossed trapezoid resonator shape of rectangular cross section is used toexcite broadband Mie resonances across the visible and near-IR spectra. Ournumerical simulations, optical absorption measurements and photocurrentspectral response measurements demonstrate that crossed trapezoidal Mieresonant structures enable angle-insensitive, broadband absorption. A shortcircuit current density of 12.0 mA/cm2 is achieved in 210 nm thick patterned Sifilms, yielding a 4-fold increase compared to planar films of the samethickness. It is suggested that silicon metasurfaces with Mie resonator arrayscan provide useful insights to guide future ultrathin-film solar cell designsincorporating nanostructured thin active layers.

Omnidirectional and broadband absorption enhancement from trapezoidal Mie resonators in semiconductor metasurfaces